00887nam a2200205 k 4500001001300000005001500013008004100028041001300069049003000082052002000112056001400132082001600146100002800162245028200190260003600472300004400508502008000552504002900632900002000661KDM20073706020200728141919070725s2007    ulkad      AX 000   eng  0 aengbkor0 lWM513856lWM513857c2fDP02a537.622bC545po  a427.62240 a537.6222211 a최원준0KAC2020A687310aPerformance of Hf-based high-k dielectrics and stacked gate oxides for metal-oxide-semiconductor field effect transistor=xMOSFET device의 응용을 위한 Hf 기반의 고유전체 및 다층 구조 게이트 절연막에 대한 전기 및 유전 특성 연구/dWonjoon Choi  a서울:b한양대학교,c2007  aviii, 102 leaves:bill., charts;c26 cm1 aThesis(Ph.D.) --bGraduate School, Hanyang Univ.,cDept. of Physics,d2007.  aIncludes bibliographies.10aChoi, Won-joon.