00945nam a2200229 k 4500001001300000005001500013008004100028041001300069049003200082052001700114056001500131082001600146245024200162260003600404300003000440502008000470504002800550650005300578653002000631700004500651900001900696KDM20050536220200731091031050303s2005    ulka       AX 000   kor  0 akorbeng0 lEM3253154lEM3253155c2fDP01a530.495b5-2  a530.495240 a620.19522100a원자층 증착방법을 이용한 고유전율 게이트 산화박막의 특성 평가에 관한 연구=x(The)study on the characteristics and evaluation of ultra thin high-k gate oxide using atomic layer deposition method/d具栽亨  a서울:b漢陽大學校,c2005  axv, 257p.:b삽도;c26cm1 a학위논문(박사) --b漢陽大學校 大學院:c材料工學科,d2005  a참고문헌: p.241-251 8a유전체 박막[誘電體薄膜]0KSH2000031771  a반도체소자1 a구재형,g具栽亨0KAC2020B24614aut10aKoo, Jaehyoung