01004nam a2200217 k 4500001001300000005001500013008004100028041001300069049003000082052001800112056001300130082001500143100004800158245024300206260003600449300003100485502008600516653013200602900002600734963002600760KDM20032117820200904162714030515s2003    ulka       AX 000   eng  0 aengbkor0 lWM375843lWM375844c2fDP02a620.11bG491p  a530.4240 a620.112211 a김영배,g金英培,d1969-0KAC2020G252110aProcess development and evaluation of an alternative gate dielectric and electrode material for the next generation semiconductor=x차세대 반도체용 유전물질 및 전극물질에 대한 공정 개발 및 특성 평가/d金英培  a서울:b漢陽大學校,c2003  axix, 154p.:b삽도;c26cm1 a학위논문(박사) --b한양대학교 대학원:c무기재료공학과,d2003  aEVALUATIONaALTERNATIVEaGATEaDIELECTRICaELECTRODEaMATERIALaSEMICONDUCTORa차세대a반도체a유전물질a전극물질10aKim, Youngbae,d1969-  a무기재료공학과