01308nam a2200265 c 4500001001300000005001500013008004100028040001100069041001300080052003600093245022400129300002300353545008900376545005600465545006100521653015700582700001900739700004800758700001900806773014500825856002000970856001900990900001701009900001601026KSI00058496020090408132313070411s2005    ulk           000   kor    a0110010 akorbeng01a559.705b대445ㄷc43(5)-43(8)00a질소 첨가에 의한 α-Ta의 안정화 및 확산 방지막으로서의 열적 안정성=xStabilization of α-Ta by N₂addition and thermal stability as a diffusion barrier/d배준우,e임재원,eMinoru Isshiki  ap. 505-510;c30 cm  a배준우, 동북대학 다원물질과학연구소bbjw0930@mail.tagen.tohoku.ac.jp  a임재원, 동북대학 다원물질과학연구소  aMinoru Isshiki, 동북대학 다원물질과학연구소  aTa(N)aα-TaaDiffusion barrieraIon beam depositionaResistivityaSubstrate bias voltageaThermal stabilitya질소a확산 방지막a열적 안정성1 a배준우4aut1 a임재원,g林載元,d1972-0KAC2016240251 aMinoru Isshiki0 t대한금속·재료학회지.d대한금속.재료학회.g43권 7호(2005년 7월), p. 505-510q43:7<505w(011001)KSE200000110,x1738-822840uT00000468382ad40u360944aKd00010aBae, Joonwoo10aLim, Jaewon