01088nam a2200229 c 4500001001300000005001500013008004100028040001100069041001300080052003600093245017500129300002300304545009000327545006100417653010600478700005300584700001900637773014500656856002000801856002100821900001600842KSI00058459220090407105913070409s2004    ulk           000   kor    a0110010 akorbeng01a559.705b대445ㄷc42(1)-42(4)00a기판 바이어스에 의한 구리 seed layer의 특성 향상=xImprovement of Cu seed layer properties by applying substrate bias voltage/d임재원,eMinoru Isshiki  ap. 212-217;c30 cm  a임재원, 동북대학 다원물질과학연구소bflashlim@mail.tagen.tohoku.ac.jp  aMinoru Isshiki, 동북대학 다원물질과학연구소  aCopperaSeed layeraIon bombardmentaResistivityaSubstrate bias voltagea기판 바이어스a구리1 a임재원,g林載元,d1972-0KAC2016240254aut1 aMinoru Isshiki0 t대한금속·재료학회지.d대한금속.재료학회.g42권 2호(2004년 2월), p. 212-217q42:2<212w(011001)KSE200000110,x1738-822840uT00000491091ad40u40124129aKd00010aLim, Jaewon