01111nam a2200217 c 4500001001300000005001500013008004100028040001100069041001300080052003600093245024700129300002300376545005600399545006100455653012300516700005300639700001900692773014500711856002100856900001600877KSI00058443120070719164919070406s2003    ulk           000   kor    a0110010 akorbeng01a559.705b대445ㄷc41(5)-41(8)00a비질량분리형 이온빔증착법에 의한 ULSI 금속배선용 구리박막에 관한 특성연구=xFundamental study of Cu thin films for ULSI metallization by non-mass separated ion beam deposition method/d임재원,eMinoru Isshiki  ap. 525-530;c30 cm  a임재원, 동북대학 다원물질과학연구소  aMinoru Isshiki, 동북대학 다원물질과학연구소  aCopperaIon beam depositionaResistivityaSubstrate bias voltagea비질량분리형a이온빔증착법a구리박막1 a임재원,g林載元,d1972-0KAC2016240254aut1 aMinoru Isshiki0 t대한금속·재료학회지.d대한금속.재료학회.g41권 8호(2003년 8월), p. 525-530q41:8<525w(011001)KSE200000110,x1738-822840u40123963aKd00010aLim, Jaewon