01154nam a2200265 c 4500001001300000005001500013008004100028040001100069041001300080052003900093245018700132300002300319545007300342545005300415545005300468653006500521700001900586700001400605700003600619773015600655856002100811900002000832900001900852900001700871KSI00054451420080423104110060731s2004    ulk           000   kor    a0110010 akorbeng01a569.205b한597ㅈㄱc17(5)-17(8)00aDebye 이론을 이용한 유기 EL용 Alq₃계 재료의 trap level 측정=xTrap level study of Alq₃for OLED with debye dielectric relaxation/d정용석,e정연태,e김종태  ap. 668-672;c26 cm  a정용석, 부경대학교 화상정보공학부bjeongys@pknu.ac.kr  a정연태, 부경대학교 화상정보공학부  a김종태, 부경대학교 화상정보공학부  aOLEDaDielectric relaxationaTrap depthaTransport mechanism1 a정용석4aut1 a정연태1 a김종태,d1962-0KAC2018467500 t전기전자재료학회 논문지.d한국전기전자재료학회.gVol.17 no.6(2004년 6월), p. 668-672q17:6<668w(011001)KSE199800338,x1226-794540u40042200aKd00010aJeong, Yongseok10aJeong, Yeontae10aKim, Jongtae