00806nam a2200229 a 4500001001300000005001500013007000300028008004100031041001300072049001800085052002200103056001400125082001900139100002800158245012300186260003300309300004200342502010900384504003100493546003400524900001800558KDM20130954120200721101452ta130917s2013    ulkad    m AQ 000   eng  0 aengbkor0 lWM749573fWDP02a621.381528b13-17  a569.432501a621.3815282211 a강정한0KAC20209690810aStress and process dependent characterization and modeling of amorphous InGaZnO thin-film transistors /dJung Han Kang  aSeoul :bYonsei Univ.,c2013  ax, 89 leaves :bill., charts ;c26 cm1 aThesis(Ph.D.) --bGraduate School, Yonsei  Univ.,cDept. of Electrical and Electronic Engineering,d2013  aBibliography: leaves 78-87  aIn English; summary in Korean10aKang, Junghan