01114nam a2200313 c 4500001001300000005001500013007000300028008004100031041001300072049001800085052001600103056001300119082001800132245015800150260003900308300003700347500005500384500003700439504002400476546002500500650005300525650003400578650004300612700001400655710004800669710004600717910002000763950001700783KMO20132878220231115100131ta130521s2003    ggkad         000   korBU0 akorbeng0 lEM5659343fGP01a569.4b13-2  a569.42501a621.3815222100a실리콘-게르마늄 양자채널 나노신소자 기술 연구 =xStudies on SiGe quantum-well channel nano device technology /d과학기술부 [편]  a[과천] :b과학기술부,c2003  a51 p. :b삽화, 도표 ;c30 cm  a주관연구기관명: 한국전자통신연구원  a주관연구책임자: 송영주  a참고문헌: p. 42  a영어 요약 있음 8a반도체 소자[半導體素子]0KSH1998032424 8a규소[硅素]0KSH1998000580 8a게르마늄[germanium]0KSH19980005781 a송영주  a한국.b과학기술부0KAB2014001234aut  a한국전자통신연구원0KAB201500481 0a과학기술부1 a가격불명