01428nam a2200325 c 4500001001300000005001500013008004100028040001100069041001300080052002900093245020500122300002100327545009100348545005000439545005000489545005000539545005000589653008900639700001900728700001400747700004800761700001400809700001400823773017100837900001901008900001901027900001801046900002001064900001801084KSI00018627920040521195906040506s2002    ulk           000   kor    a0110010 akorbeng01a469.05b한428ㅎc12(2)00a기상성장법(CVT)에 의한 Iron disilicide 단결정의 합성=xSynthesis of iron disiliide single crystal by chemical vapour transport/d이충효,e홍대석,e이상진,e최종건,e김판채  ap. 68-72;c29 cm  a이충효, 목포대학교 신소재공학과, Corresponding authorbchlee@mokpo.ac.kr  a홍대석, 목포대학교 신소재공학과  a이상진, 목포대학교 신소재공학과  a최종건, 동신대학교 신소재공학부  a김판채, 동신대학교 신소재공학부  aIron disilicideaChemical vapour transportaX-ray diffractionaEPMAa기상성장법1 a이충효4aut1 a홍대석1 a이상진,g李相陳,d1964-0KAC2015108261 a최종건1 a김판채0 tJournal of the Korean crystal growth and crystal technology.d韓國結晶成長學會.g12권 2호(2002년 4월), p. 68-72q12:2<68w(011001)KSE199508766,x1225-142910aLee, Chung-Hyo10aHong, Dae-Seok10aLee, Sang-Jin10aChoi, Jong-Keon10aKim, Pan-Chae