01025nam a2200217 c 4500001001300000005001500013008004100028040001100069041001300080052002900093245018600122300002100308545006900329545007100398653004800469700003300517700004800550773017200598900001700770900002000787KSI00018534220040521195848040504s2001    ulk           000   kor    a0110010 akorbeng01a469.05b한428ㅎc11(3)00a고온 열처리에 의한 결정결함의 재용해=x(The)annihilation of the flow pattern defects in CZ-silicon crystal by high temperature heat treatment/d서지욱,e김영관  ap. 89-95;c29 cm  a서지욱, 인천대학교 재료공학과, Corresponding author  a김영관, 인천대학교 재료공학과byoungkim@incheon.ac.kr  aCZ-silicon crystala열처리a결정결함1 a서지욱0KAC2020D64784aut1 a김영관,g金榮寬,d1954-0KAC2018M24010 tJournal of the Korean crystal growth and crystal technology.d韓國結晶成長學會.g 11권 3호(2001년 6월), p. 89-95q11:3<89w(011001)KSE199508766,x1225-142910aSeo, Ji Wook10aKim, Young Kwan