01102nam a2200217 c 4500001001300000005001500013008004100028040001100069041001300080052002800093245025200121300002300373545005300396545005300449653010900502700005300611700001400664773017200678900001700850900001700867KSI00018357820040520195820040501s1996    ulk           000   kor    a0110010 akorbeng01a469.05b한428ㅎc6(3)00aReactive sputtering법에 의한 PZT 박막 증착후 냉각시 산소분압의 영향에 관한 연구=xEffects of changing the oxygen partical pressure in cooling after deposition of PZT thin films by reactive sputtering/d이희수,e오근호  ap. 406-414;c29 cm  a이희수, 한양대학교 무기재료공학과  a오근호, 한양대학교 무기재료공학과  aPZT 박막aReactive sputteringa냉각a산소분압aCoolingaPZT thin filmsaOxygen partical pressure1 a이희수,g李熙秀,d1966-0KAC2018305104aut1 a오근호0 tJournal of the Korean crystal growth and crystal technology.d韓國結晶成長學會.g6권 3호(1996년 8월), p. 406-414q6:3<406w(011001)KSE199508766,x1225-142910aLee, Hee Soo10aAuh, Keun Ho