01040nam a2200217 c 4500001001300000005001500013008004100028040001100069041001300080052002800093245020200121300002300323545005300346545005300399653009700452700005300549700001400602773017200616900001700788900001700805KSI00018319420040520195815040430s1996    ulk           000   kor    a0110010 akorbeng01a469.05b한428ㅎc6(1)00aPZT 박막제조시 하부전극과 buffer층에 따른 박막특성에 관한 연구=xCharacteristics of PZT thin films with varying the bottom-electrodes and buffer layer/d이희수,e오근호  ap. 177-184;c29 cm  a이희수, 한양대학교 무기재료공학과  a오근호, 한양대학교 무기재료공학과  aPZT 박막a하부전극aBuffer층a박막aPZT thin filmsaBottom-electrodesaBuffer layer1 a이희수,g李熙秀,d1966-0KAC2018305104aut1 a오근호0 tJournal of the Korean crystal growth and crystal technology.d韓國結晶成長學會.g6권 2호(1996년 5월), p. 177-184q6:2<177w(011001)KSE199508766,x1225-142910aLee, Hee-Soo10aAuh, Keun-Ho