00963nam a2200217 c 4500001001300000005001500013008004100028040001100069041001300080052002800093245020400121300002100325545002800346545004700374653005200421700001900473700004800492773016900540900001800709900001800727KSI00018277920040520195810040430s1996    ulk           000   kor    a0110010 akorbeng01a469.05b한428ㅎc6(1)00a대구경 규소 Czochralski 단결정 속의 결정 결함 규명=xCharacterization of the grown-in defects in the large diameter silicon crystal grown by czochralski method/d이보영,e김영관  ap. 11-18;c29 cm  a이보영, (주)SILTRON  a김영관, 인천대학교 재료공학과  aCzochralskia대구경a규소aSilicon crystal1 a이보영4aut1 a김영관,g金榮寬,d1954-0KAC2018M24010 tJournal of the Korean crystal growth and crystal technology.d韓國結晶成長學會.g6권 1호(1996년 3월), p. 11-18q6:1<11w(011001)KSE199508766,x1225-142910aLee, Bo Young10aKim, Young K.