01180nam a2200265 c 4500001001300000005001500013008004100028040001100069041001300080052002800093245017900121300003200300545010100332545005300433545005300486653010600539700001900645700001400664700003600678773012500714856002000839900001800859900001800877900001900895KSI00003988920040126182145031010s1993    ulka          000   kor    a0110010 akorbeng01a570.5b한648ㅎc31(6)00aCF₄/O₂ 식각 가스계를 사용한 텅스텐 박막의 건식 식각 연구=xDry etching of tungsten films in CF₄/O₂ gas system/d권성구,e남철우,e우성일  ap. 675-682:b삽도;c29 cm  a권성구, Hyundai Electronics Industries Co., Ltd., Semiconductor Research ＆ Development Lab.  a남철우, 한국과학기술원 화학공학과  a우성일, 한국과학기술원 화학공학과  a화학공학a식각a가스a텅스텐a박막a건식aDryaGasaSystemaCF₄/O₂aTungstenaFilm1 a권성구4aut1 a남철우1 a우성일,d1951-0KAC2017063990 t화학공학.d한국화학공학회.g31권 6호(1993년 12월), p. 675-682q31:6<667w(011001)KSE199509737,x0304-128X40uT00000274219ad10aKwon, Sung Ku10aNam, Chul Woo10aWoo, Seung Ihl