01524nam a2200289 c 4500001001300000005001500013008004100028040001100069041001300080052003500093245033900128300003200467545004700499545004700546545006200593545004700655653020300702700005300905700001400958700004800972700001401020773012801034900001801162900002001180900001601200900001801216KSI00016167520040209194246031216s2000    ulka          000   kor    a0110010 akorbeng01a554.9405b한622ㅎc9(1)-9(4)00aImpurity-free vacancy diffusion 방법을 이용하여 압축 응력을 가진 InGaAs/InGaAsP 다중양자우물 구조의 무질서화=xQuantum well intermixing of compressively strained InGaAs/InGaAsP multiple quantum well structure by using impurity-free vacancy diffusion technique/d김현수,e박정우,e오대곤,e최인훈  ap. 150-154:b삽도;c26 cm  a김현수, 고려대학교 재료공학과  a방정우, 서울대학교 전자공학과  a오대곤, 한국전자통신연구원 원천기술본부  a최인훈, 고려대학교 재료공학과  aImpurity-freeaVacancyaDiffusiona압축응력aInGaAsaInGaAsPa다중양자우물a구조a무질서화aQuantumaWellaIntermixingaCompressivelyaStrainedaMultipleaStructureaUsingaTechnique1 a김현수,g金鉉洙,d1973-0KAC2018564764aut1 a방정우1 a오대곤,g吳大坤,d1959-0KAC2016239771 a최인훈0 t韓國眞空學會誌.d韓國眞空學會.g9권 2호(2000년 5월), p. 150-154q9:2<150w(011001)KSE199508370,x1225-882210aKim, Hyun Soo10aPark, Jeong Woo10aOh, Dae Kon10aChoi, In-Hoon