01619nam a2200325 c 4500001001300000005001500013008004100028040001100069041001300080052004000093245023900133300003400372545007700406545005900483545005900542545005900601545004700660653016500707700004800872700003600920700005300956700001401009700001401023773016101037900001701198900002101215900001901236900001801255900002001273KSI00005455420040207083346031010s2001    ulka          000   kor    a0110011 akorbeng01a569.205b한597ㅈㄱc14(9)-14(12)00aAu/Ta₂<TEX>$$O_5$$</TEX>/Pt MIM capacitor의 annealing과 유전 특성=x(A)study on the dielectric and annealing properties in Au/Ta₂<TEX>$$O_5$$</TEX>/Pt MIM capacitor/d김인성,e정순종,e송재성,e윤문수,e박정후  ap. 1016-1022:b삽도;c26 cm  a김인성, 한국전기연구원 전자기소자그룹bkimis@keri.re.kr  a정순종, 한국전기연구원 전자기소자그룹  a송재성, 한국전기연구원 전자기소자그룹  a윤문수, 한국전기연구원 전자기소자그룹  a박정후, 부산대학교 전기공학과  aAu/Ta₂<TEX>$$O_5$$</TEX>/Pta유전aTantalum pentoxideaMIN capacitoraMIM capacitoraMetal-insulator-metal capacitoraSputteringaPassive devicesaAnnealing1 a김인성,g金寅性,d1964-0KAC2018521491 a정순종,d1965-0KAC2017010181 a송재성,g宋在成,d1956-0KAC2016376214aut1 a윤문수1 a박정후0 t전기전자재료학회논문지.d한국전기전자재료학회.gVol.14 no.12(2001년 12월), p. 1016-1022q14:12<1016w(011001)KSE199800338,x1226-794510aKim, In-Sung10aJeong, Soon-Jong10aSong, Jae-Sung10aYun, Moon-Soo10aPark, Chung-Hoo